? silikron semiconductor corporation 2010.12.10 version: 2.1 page 1of5 SSF1122D absolute maximum ratings parameter max. units i d @t c =25 ? c continuous drain current,vgs@10v 60 a i d @t c =100 ? c continuous drain current,vgs@10v 50 i dm pulsed drain current 240 p d @t c =25 ? c power dissipation 1 43 w linear derating factor 2.0 w/ ? c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 240 mj e ar repetitive avalanche energy tbd t j t stg operating junction and storage temperature range ?55 to + 175 ? c thermal resistance parameter min. typ. max. units r jc junction-to-case ? 1.05 ? ? c/w r ja junction-to-ambient ? ? 62 electrical characteristics @tj=25 ? c (unless otherwise specified) parameter min. typ. max. units test conditions bv dss drain-to-source breakdown voltage 110 ? ? v v gs =0v,i d =250 a r ds(on) static drain-to-source on-resistance ? 20 22 m ? v gs =10v,i d =30a v gs(th) gate threshold voltage 2.0 3.0 4.0 v v ds =v gs ,i d =250 a g fs forward transconductance ? 58 ? s v ds =5v,i d =30a i dss drain-to-source leakage current ?? 1 a v ds =110v,v gs =0v ?? 10 v ds =110v, v gs =0v,t j =150 ? c SSF1122D top view (dpak) id =60a bv=110v rdson=20 m ? typ. feathers: ? advanced trench process technology ? ultra low rdson ? high avalanche energy, 100% test ? fully characterized avalanche voltage and current description: the SSF1122D is a new generation of middle voltage and high current n?channel enhancement mode trench power mosfet. this new technology in creases the dev ice reliability and electrical parameter repeatability. SSF1122D is assembled in high reliability and qualified assembly house. application: ? power switching application
? silikron semiconductor corporation 2010.12.10 version: 2.1 page 2of5 SSF1122D i gss gate-to-source forward leakage ? ? 100 na v gs =20v gate-to-source reverse leakage ? ? -100 v gs =-20v q g total gate charge ? 90 ? nc i d =30a v dd =30v v gs =10v q gs gate-to-source charge ? 14 ? q gd gate-to-drain("miller") charge ? 24 ? t d(on) turn-on delay time ? 18.2 ? ns v dd =30v i d =2a ,r l =15 ? r g =2.5 ? v gs =10v t r rise time ? 15.6 ? t d(off) turn-off delay time ? 70.5 ? t f fall time ? 13.8 ? c iss input capacitance ? 3150 ? pf v gs =0v v ds =25v f=1.0mhz c oss output capacitance ? 300 ? c rss reverse transfer capacitance ? 240 ? source-drain ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current (body diode) ? ? 60 a mosfet symbol showing the integral reverse p-n junction diode. i sm pulsed source current (body diode) ? ? 240 v sd diode forward voltage ? ? 1.3 v t j =25 ? c,i s =30a,v gs =0v t rr reverse recovery time ? 57 ? ns t j =25 ? c,i f =60a di/dt=100a/ s q rr reverse recovery charge ? 107 ? nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls + ld) notes: repetitive rating; pulse width limited by max junction temperature. test condition: l =0.3mh, id = 40a, vdd = 50v pulse width 300 s, duty cycle 1.5% ; rg = 25 ? ?? starting tj = 25c gate charge test circuit eas test circuit
? silikron semiconductor corporation 2010.12.10 version: 2.1 page 3of5 SSF1122D switch time test circuit switch waveforms: transfer characteristic capacitance: on resistance vs. junction temperature breakdown voltage vs. junction temperature
? silikron semiconductor corporation 2010.12.10 version: 2.1 page 4of5 SSF1122D gate charge source-drain diode forward voltage safe operation area max drain current vs. junction temperature transient thermal impedance curve
? silikron semiconductor corporation 2010.12.10 version: 2.1 page 5of5 SSF1122D dpak mechanical data:
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